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  1. Integrated photonics provides a powerful approach for developing compact, stable, and scalable architectures for the generation, manipulation, and detection of quantum states of light. To this end, several material platforms are being developed in parallel, each providing its specific assets, and hybridization techniques to combine their strengths are available. This review focuses on AlGaAs, a III–V semiconductor platform combining a mature fabrication technology, direct band-gap compliant with electrical injection, low-loss operation, large electro-optic effect, and compatibility with superconducting detectors for on-chip detection. We detail recent implementations of room-temperature sources of quantum light based on the high second- and third-order optical nonlinearities of the material, as well as photonic circuits embedding various functionalities ranging from polarizing beamsplitters to Mach–Zehnder interferometers, modulators, and tunable filters. We then present several realizations of quantum state engineering enabled by these recent advances and discuss open perspectives and remaining challenges in the field of integrated quantum photonics with AlGaAs.

     
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  2. We show that dielectric nanoantennas are capable of inducing very high Purcell enhancement up to factors > 45 for defect-based single-quantum emitters in atomically thin layered materials, enabling bright single-photon emission with polarization control. 
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  3. Aluminum gallium arsenide-on-insulator (AlGaAsOI) exhibits large [Formula: see text] and [Formula: see text] optical nonlinearities, a wide tunable bandgap, low waveguide propagation loss, and a large thermo-optic coefficient, making it an exciting platform for integrated quantum photonics. With ultrabright sources of quantum light established in AlGaAsOI, the next step is to develop the critical building blocks for chip-scale quantum photonic circuits. Here we expand the quantum photonic toolbox for AlGaAsOI by demonstrating edge couplers, 3 dB splitters, tunable interferometers, and waveguide crossings with performance comparable to or exceeding silicon and silicon-nitride quantum photonic platforms. As a demonstration, we de-multiplex photonic qubits through an unbalanced interferometer, paving the route toward ultra-efficient and high-rate chip-scale demonstrations of photonic quantum computation and information applications. 
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  4. Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, room-temperature operation, site-specific engineering of emitter arrays, and tunability with external strain and electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency up to 46% at room temperature, which exceeds the theoretical limit for cavity-free waveguide-emitter coupling and previous demonstrations by nearly an order-of-magnitude. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources. 
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